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  • 7783-29-1 Structure
  • Basic information

    1. Product Name: Si4H10
    2. Synonyms: Si4H10;n-TETRASILANE
    3. CAS NO:7783-29-1
    4. Molecular Formula: H10Si4
    5. Molecular Weight: 122.4214
    6. EINECS: N/A
    7. Product Categories: N/A
    8. Mol File: 7783-29-1.mol
    9. Article Data: 4
  • Chemical Properties

    1. Melting Point: ~-90°; mp -84.3°
    2. Boiling Point: bp 109°; bp (calc) 107.4°
    3. Flash Point: °C
    4. Appearance: /colorless liquid
    5. Density: d0 0.825
    6. Refractive Index: N/A
    7. Storage Temp.: N/A
    8. Solubility: N/A
    9. CAS DataBase Reference: Si4H10(CAS DataBase Reference)
    10. NIST Chemistry Reference: Si4H10(7783-29-1)
    11. EPA Substance Registry System: Si4H10(7783-29-1)
  • Safety Data

    1. Hazard Codes: N/A
    2. Statements: N/A
    3. Safety Statements: N/A
    4. WGK Germany:
    5. RTECS:
    6. HazardClass: N/A
    7. PackingGroup: N/A
    8. Hazardous Substances Data: 7783-29-1(Hazardous Substances Data)

7783-29-1 Usage

Description

Si4H10, also known as silane or silicane, is a colorless liquid with a density of 0.79 g/mL at 0°C. It freezes at -108°C and boils at 84.3°C. Si4H10 has a vapor density of 5.48 g/L at standard temperature and pressure (STP) and decomposes in water. It has an enthalpy of vaporization of 35.56 kJ/mol and a vapor pressure of 9.1 mm Hg at 0°C. The critical temperature of Si4H10 is 249°C.

Uses

Used in Electronics Industry:
Si4H10 is used as a precursor in the production of silicon-based semiconductors and electronic devices due to its ability to decompose and release high-purity silicon.
Used in Chemical Industry:
Si4H10 is used as a reducing agent in various chemical reactions, as it can donate electrons to other substances.
Used in Glass Industry:
Si4H10 is used in the production of specialty glass, such as solar panels and optical fibers, due to its ability to form stable silicon compounds.
Used in Automotive Industry:
Si4H10 is used in the production of hydrogen storage materials for fuel cell vehicles, as it can store hydrogen in a stable and compact form.
Used in Aerospace Industry:
Si4H10 is used in the production of lightweight and high-strength composite materials for aerospace applications, as it can form strong bonds with other elements.

Check Digit Verification of cas no

The CAS Registry Mumber 7783-29-1 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 7,7,8 and 3 respectively; the second part has 2 digits, 2 and 9 respectively.
Calculate Digit Verification of CAS Registry Number 7783-29:
(6*7)+(5*7)+(4*8)+(3*3)+(2*2)+(1*9)=131
131 % 10 = 1
So 7783-29-1 is a valid CAS Registry Number.
InChI:InChI=1/H10Si4/c1-3-4-2/h3-4H2,1-2H3

7783-29-1Downstream Products

7783-29-1Relevant articles and documents

Synthesis of polysilanes by tunneling reactions of H atoms with solid Si2H6 at 10K

Sogoshi, Norihito,Sato, Shoji,Takashima, Hideaki,Sato, Tetsuya,Hiraoka, Kenzo

, p. 986 - 987 (2012/09/22)

Tunneling reactions of H atoms with solid Si2H6 at 10K were investigated. The in situ and real-time reactions H + Si 2H6 to form silane and polysilanes were monitored using FT-IR. Quantitative analysis of gaseou

Decomposition channels of chemically activated disilane. The π bond energy of disilene and its derivatives

Olbrich,Potzinger,Reimann,Walsh

, p. 1267 - 1272 (2008/10/08)

The Hg (3P1) sensitized photolysis of an H2/SiH4 mixture not only yields Si2H6 but also Si3H8 and Si4H10. The formation of the latter two products as well as parts of the Si2H6 yield is explained by the decomposition of chemically activated disilane, formed by the combination of two silyl radicals. The activated disilane decomposes mainly into SiH2 + SiH4 which finally reacts to Si2H6 and to a lesser extent into H2 + H3SiSiH: and H2 + H2SiSiH2. The silykilylene inserts into SiH4 yielding Si3H8, while disilene is thought to be scavenged successively by two SiH3 radicals, the main reactive species under the given conditions. From the relative rate constants of the three decomposition channels, ΔHf(H3SiSiH:) = 273 ± 11 kJ/mol can be calculated. Also a lower bound to the π bond energy of disilene Bπ(H2SiSiH2) ≥ 69 ± 11 kJ/mol is obtained. Ab initio CI calculations give Bπ(H2SiSiH2) = 93 ± 8 kJ/mol. A substituted disilene is shown to have a probable π bond energy of 108 ± 20 kJ/mol from a thermochemical analysis of literature data.

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