68784-13-4

Basic information

• Product Name: Germanium magnesium fluoride oxide manganese-doped
• Synonyms: Germanium magnesium fluoride oxide, manganese-doped
• CAS NO: 68784-13-4
• Molecular Formula: F2GeMgO2
• Molecular Weight: 166.94
• EINECS: 272-222-8
• Mol File: 68784-13-4.mol
• Article Data: 0

Chemical Properties

• Boiling Point: 197 oC
• Appearance: /
• Density: 3.0g/cm³
• CAS DataBase Reference: Germanium magnesium fluoride oxide manganese-doped(CAS DataBase Reference)
• NIST Chemistry Reference: Germanium magnesium fluoride oxide manganese-doped(68784-13-4)
• EPA Substance Registry System: Germanium magnesium fluoride oxide manganese-doped(68784-13-4)

Safety Data

• Hazardous Substances Data: 68784-13-4(Hazardous Substances Data)

Usage

Description

Germanium magnesium fluoride oxide manganese-doped is a complex chemical compound that integrates the properties of germanium, magnesium, fluoride, oxide, and manganese. Germanium magnesium fluoride oxide manganese-doped leverages the semiconducting nature of germanium, the strength and lightness of magnesium, the reactive fluorine in fluoride, the binding capacity of oxygen in oxide, and the versatile oxidation states of manganese. The amalgamation of these elements endows the compound with a unique set of characteristics, making it a candidate for various high-tech applications.

Uses

Used in Semiconductor Industry:
Germanium magnesium fluoride oxide manganese-doped is used as a semiconductor material for its ability to conduct electricity under certain conditions. The presence of germanium, known for its semiconducting properties, makes this compound suitable for use in the development of electronic components and devices that require materials with controllable electrical conductivity.
Used in Electronics Industry:
In the electronics industry, Germanium magnesium fluoride oxide manganese-doped is utilized as a component in electronic devices due to its unique combination of elements. Germanium magnesium fluoride oxide manganese-doped's properties may contribute to enhancing the performance of electronic components, such as transistors and diodes, by improving their efficiency, reliability, and miniaturization.
Used in Advanced Materials Research:
Germanium magnesium fluoride oxide manganese-doped is also used as a subject of research in the development of advanced materials. The integration of multiple elements with distinct properties allows scientists and material engineers to explore new material systems with potential applications in various fields, including aerospace, automotive, and renewable energy technologies.
Used in Optoelectronics:
Germanium magnesium fluoride oxide manganese-doped can be employed in optoelectronic applications due to the light interaction properties of germanium and the influence of manganese doping. This makes the compound a candidate for use in light-emitting diodes (LEDs), photovoltaic cells, and other devices that rely on the interaction of light with electronic materials.
Used in Catalyst Development:
Germanium magnesium fluoride oxide manganese-doped may also find use in the development of catalysts, particularly in chemical processes that benefit from the presence of manganese and the other elements in the compound. The unique electronic structure and reactivity of the compound could lead to the creation of more efficient and selective catalysts for industrial applications.