1256375-24-2Relevant articles and documents
High and balanced hole and electron mobilities from ambipolar thin-film transistors based on nitrogen-containing oligoacences
Liu, Yi-Yang,Song, Cheng-Li,Zeng, Wei-Jing,Zhou, Kai-Ge,Shi, Zi-Fa,Ma, Chong-Bo,Yang, Feng,Zhang, Hao-Li,Gong, Xiong
, p. 16349 - 16351 (2010)
We demonstrate a strategy for designing high-performance, ambipolar, acene-based field-effect transistor (FET) materials, which is based on the replacement of C-H moieties by nitrogen atoms in oligoacenes. By using this strategy, two organic semiconductors, 6,13-bis(triisopropylsilylethynyl) anthradipyridine (1) and 8,9,10,11-tetrafluoro-6,13- bis(triisopropylsilylethynyl)-1-azapentacene (3), were synthesized and their FET characteristics studied. Both materials exhibit high and balanced hole and electron mobilities, 1 having μh and μe of 0.11 and 0.15 cm2/V·s and 3 having μh and μe of 0.08 and 0.09 cm2/V·s, respectively. The successful demonstration of high and balanced ambipolar FET properties from nitrogen-containing oligoacenes opens up new opportunities for designing high-performance ambipolar organic semiconductors.