Silicon monoxide (cas 10097-28-6) role in silicon nanocluster formation during Si-rich oxide layer annealing – Monte Carlo simulation

Add time:07/17/2019    Source:sciencedirect.com

A kinetic Monte Carlo model of silicon nanocluster (Si-nc) formation during high temperature annealing of Si suboxide layers was suggested. The model takes into account, along with silicon and oxygen atom diffusion, the processes of Silicon monoxide (cas 10097-28-6) creation and dissociation. It was demonstrated that the presence of SiO in the system results in an increase of Si-nc critical nuclear size and can accelerate nanocluster growth. It was found that Si-ncs were formed only in the SiOx layer with x < 1.8. Three stages of Si-nc aggregation were revealed: silicon cluster nucleation, coalescence of neighbor Si-ncs, and slow enlargement of separately located clusters. Annealing of the SiO2 film containing nonstoichiometric SiOx layers resulted in Si-nc or cavity formation depending on temperature. The type of the process was determined by ratio between SiO dissociation and evaporation rates.

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