High temperature-stability of organic thin-film transistors based on Quinacridone (cas 1047-16-1) pigments

Add time:07/24/2019    Source:sciencedirect.com

Robust organic thin-film transistors (OTFTs) with high temperature stability allow device integration with mass production methods like thermoforming and injection molding, and enable operation in extreme environment applications. Herein we elaborate a series of materials to make suitable gate dielectric and active semiconductor layers for high temperature stable OTFTs. We employ an anodized aluminum oxide layer passivated with cross-linked low-density polyethylene (LD-PE) to form a temperature-stable gate capacitor. As the semiconductor, we use Quinacridone (cas 1047-16-1), an industrial organic colorant pigment produced on a mass scale. Evaporated MoOx/Ag source and drain electrodes complete the devices. Here we evaluate the performance of the OTFTs heating them in air from 100 °C in 25 °C increments up to 225 °C, holding each temperature for a period of 30 minutes. We find large differences in stability between quinacridone and its dimethylated derivative, with the former showing the best performance with only a factor of 2 decline in mobility after heating at 225 °C, and unaffected on/off ratio and threshold voltage. The approach presented here shows how industriallys calable fabrication of thermally robust OTFTs can be rationalized.

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