2172-02-3 Usage
Description
Hafnium tert-butoxide (Hf(OtBu)4) is a mononuclear, volatile compound derived from the element hafnium, which has an atomic number of 72. It is highly promising as a precursor for the deposition of HfO2 and other hafnium-doped thin films through vapor deposition techniques. The resulting films exhibit a high dielectric constant, making them suitable for use in semiconductor devices.
Uses
Used in Semiconductor Industry:
Hafnium tert-butoxide is used as a precursor for the deposition of HfO2 and other hafnium-doped thin films for their application in semiconductor devices. The reason for its use is the high dielectric constant of the deposited films, which is crucial for the performance and efficiency of these devices.
Used in Thin Film Deposition:
Hafnium tert-butoxide is used as a volatile precursor in vapor deposition techniques for the creation of thin films. The application reason is its mononuclear structure, which allows for precise control over the deposition process and the formation of high-quality films with desired properties.
Used in Dielectric Materials:
Hafnium tert-butoxide is used as a component in the development of dielectric materials for electronic devices. The high dielectric constant of the resulting HfO2 films makes them ideal for use as insulating layers in capacitors and other electronic components, enhancing their performance and reliability.
Check Digit Verification of cas no
The CAS Registry Mumber 2172-02-3 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 2,1,7 and 2 respectively; the second part has 2 digits, 0 and 2 respectively.
Calculate Digit Verification of CAS Registry Number 2172-02:
(6*2)+(5*1)+(4*7)+(3*2)+(2*0)+(1*2)=53
53 % 10 = 3
So 2172-02-3 is a valid CAS Registry Number.
InChI:InChI=1/4C4H9O.Hf/c4*1-4(2,3)5;/h4*1-3H3;/q4*-1;+4
