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13428-80-3

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13428-80-3 Usage

Description

Hafnium ethoxide, also known as hafnium(IV) ethoxide, is an inorganic compound with the chemical formula Hf(OC2H5)4. It is a colorless to pale yellow liquid that is sensitive to air and moisture. Hafnium ethoxide is a precursor to various hafnium-based materials and is known for its high reactivity and stability.

Uses

Used in Refractory Coatings:
Hafnium ethoxide is used as a precursor for the preparation of refractory coatings, which are essential in high-temperature applications such as aerospace and automotive industries. These coatings provide excellent thermal stability, corrosion resistance, and wear resistance.
Used in Nano-materials & Thin Films:
In the field of nano-materials and thin films, hafnium ethoxide is utilized as a starting material for the synthesis of hafnium-based nanostructures and thin films. These materials exhibit unique properties, such as high dielectric constants and excellent thermal stability, making them suitable for applications in microelectronics and optoelectronics.
Used in Display & Imaging:
Hafnium ethoxide is employed in the development of advanced display and imaging technologies. The high refractive index and optical transparency of hafnium-based materials make them ideal for use in components such as lenses, mirrors, and optical coatings.
Used in Catalysis & Synthesis:
As a catalyst or catalyst precursor, hafnium ethoxide plays a crucial role in various chemical reactions, including hydrogenation, oxidation, and polymerization processes. Its unique electronic and structural properties enable it to enhance the efficiency and selectivity of these reactions.
Used in Hybrid & Disperse Materials:
Hafnium ethoxide is also used in the synthesis of hybrid and disperse materials, which combine the properties of organic and inorganic components. These materials have potential applications in areas such as energy storage, environmental remediation, and advanced materials for various industries.

Check Digit Verification of cas no

The CAS Registry Mumber 13428-80-3 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,3,4,2 and 8 respectively; the second part has 2 digits, 8 and 0 respectively.
Calculate Digit Verification of CAS Registry Number 13428-80:
(7*1)+(6*3)+(5*4)+(4*2)+(3*8)+(2*8)+(1*0)=93
93 % 10 = 3
So 13428-80-3 is a valid CAS Registry Number.
InChI:InChI=1/4C2H5O.Hf/c4*1-2-3;/h4*2H2,1H3;/q4*-1;+4

13428-80-3 Well-known Company Product Price

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  • Alfa Aesar

  • (41607)  Hafnium ethoxide, 99.9% (metals basis)   

  • 13428-80-3

  • 5g

  • 982.0CNY

  • Detail
  • Alfa Aesar

  • (41607)  Hafnium ethoxide, 99.9% (metals basis)   

  • 13428-80-3

  • 25g

  • 4172.0CNY

  • Detail

13428-80-3SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 17, 2017

Revision Date: Aug 17, 2017

1.Identification

1.1 GHS Product identifier

Product name ethanolate,hafnium(4+)

1.2 Other means of identification

Product number -
Other names hafnium ethoxide

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:13428-80-3 SDS

13428-80-3Upstream product

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13428-80-3Related news

Optimization of parameters, characterization and thermal property analysis of HAFNIUM ETHOXIDE (cas 13428-80-3) synthesized by electrochemical method07/27/2019

Hafnium ethoxide was synthesized using electrochemical method. Optimization experiments were used to optimize various parameters namely Et4NBr concentration(c): 0.01–0.06 mol/L, solution temperature (t): 30–78 °C, polar distance (D): 2.0–4.0 cm and current density (J): 100–400 A/m2. The ele...detailed

13428-80-3Relevant articles and documents

Bradley et al.

, p. 1634 (1953)

Kablitz et al.

, p. C49,C50 (1972)

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