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1312-41-0

1312-41-0

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1312-41-0 Usage

Description

Indium antimonide is a black cubic crystal with a zinc blende structure, known for its semiconductor properties and applications in various electronic devices. It has a density of 5.775 g/cm3 and melts at 525°C. Indium antimonide is insoluble in water and has a dielectric constant of 15.9. This product has been enhanced for energy efficiency and is a crystalline solid in its chemical properties.

Uses

1. Infrared Detectors and Imaging Systems:
Indium antimonide is used as a key component in infrared detectors, including FLIR systems, thermal imaging cameras, and infrared astronomy applications. It is also utilized in infrared homing missile guidance systems due to its ability to detect and process infrared radiation effectively.
2. Semiconductor Electronics:
Indium antimonide is used in the semiconductor industry for creating p-n junctions by doping a melt with acceptor impurities such as zinc or cadmium and dipping in an n-type crystal. Rate-grown junctions and broad-area surface junctions have also been produced by out-diffusing antimony in vacuum from the surface of an n-type crystal, resulting in a p-n junction just inside the surface. Indium antimonide exhibits photoconductive, photoelectromagnetic, and magnetoresistive properties, making it useful as an infrared detector, filter, and in Hall effect devices.
3. Fast Transistors:
Indium antimonide is employed in the development of fast transistors due to its semiconductor properties, which allow for rapid switching and high-speed performance in electronic devices.
4. Photo-Electromagnetic Detectors and Photodiodes:
Indium antimonide is used in thermal image detectors, specifically in photo-electromagnetic detectors and photodiodes, where its ability to respond to infrared radiation is crucial for accurate detection and imaging.

Production Methods

Intermetallic semiconductors of indium are formed from group III and group V elements, requiring very high purity of the elements (0.1 ppm).

Preparation

Indium antimonide may be synthesized from its elements by fusion of sto-ichiometric amounts of indium and antimony at elevated temperatures in anevacuated, sealed ampule.

Hazard

See indium; antimony.

Check Digit Verification of cas no

The CAS Registry Mumber 1312-41-0 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 1,3,1 and 2 respectively; the second part has 2 digits, 4 and 1 respectively.
Calculate Digit Verification of CAS Registry Number 1312-41:
(6*1)+(5*3)+(4*1)+(3*2)+(2*4)+(1*1)=40
40 % 10 = 0
So 1312-41-0 is a valid CAS Registry Number.
InChI:InChI=1/In.Sb/rInSb/c1-2

1312-41-0 Well-known Company Product Price

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  • Alfa Aesar

  • (14626)  Indium antimonide, 99.999% (metals basis)   

  • 1312-41-0

  • 2g

  • 836.0CNY

  • Detail

  • Alfa Aesar

  • (14626)  Indium antimonide, 99.999% (metals basis)   

  • 1312-41-0

  • 10g

  • 1876.0CNY

  • Detail

  • Alfa Aesar

  • (88460)  Indium antimonide, Electronic Grade, 99.99% (metals basis)   

  • 1312-41-0

  • 2g

  • 419.0CNY

  • Detail

  • Alfa Aesar

  • (88460)  Indium antimonide, Electronic Grade, 99.99% (metals basis)   

  • 1312-41-0

  • 10g

  • 1812.0CNY

  • Detail

  • Alfa Aesar

  • (88460)  Indium antimonide, Electronic Grade, 99.99% (metals basis)   

  • 1312-41-0

  • 50g

  • 8803.0CNY

  • Detail

  • Aldrich

  • (740942)  Indium antimonide Green Alternative  ≥99.99% trace metals basis

  • 1312-41-0

  • 740942-5G

  • 1,363.05CNY

  • Detail

1312-41-0SDS

SAFETY DATA SHEETS

According to Globally Harmonized System of Classification and Labelling of Chemicals (GHS) - Sixth revised edition

Version: 1.0

Creation Date: Aug 13, 2017

Revision Date: Aug 13, 2017

1.Identification

1.1 GHS Product identifier

Product name Indium antimonide

1.2 Other means of identification

Product number -
Other names indiganylidynestibane

1.3 Recommended use of the chemical and restrictions on use

Identified uses For industry use only.
Uses advised against no data available

1.4 Supplier's details

1.5 Emergency phone number

Emergency phone number -
Service hours Monday to Friday, 9am-5pm (Standard time zone: UTC/GMT +8 hours).

More Details:1312-41-0 SDS

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1312-41-0Related news

Synthesis of Mn-doped INDIUM ANTIMONIDE (cas 1312-41-0) nanowires by multi-step depositions and annealing08/16/2019

A novel approach to the synthesis of Mn-doped InSb nanowires is demonstrated in this work. We first report on the preparation of InSb nanowires without high temperature treatment. Indium nanowires are grown by glance angle deposition and then coated with a layer of Sb. Single crystalline InSb na...detailed

Role of chemical potential and limitations of growth kinematics on stoichiometry of INDIUM ANTIMONIDE (cas 1312-41-0) nanowires08/15/2019

The conditions governing the growth of indium antimonide (InSb) nanowires by antimonidization of indium (In) droplets in a Chemical Vapor Deposition (CVD) system are examined. We report on factors that affect the InSb nanowire morphology and stoichiometry when growth is catalyzed by a low surfac...detailed

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