1302-82-5 Usage
Description
Aluminum Selenide, also known as AlSe, is an inorganic compound composed of aluminum and selenium. It is characterized by its black or yellowish to light brown appearance and is unstable in air. Aluminum Selenide is formed by the reaction of stoichiometric amounts of aluminum and selenium at high temperatures, around 1000°C. With a crystal structure of a=0.389nm and c=0.630nm, it is a promising material for various applications in different industries.
Uses
Used in Semiconductor Research:
Aluminum Selenide is used as a precursor to hydrogen selenide (H2Se) for semiconductor work. It plays a crucial role in the preparation of hydrogen selenide, which is an essential compound in the semiconductor industry.
Used in Chemical Industry:
Aluminum Selenide is used in the preparation of hydrogen selenide, which is an important compound in various chemical processes and applications.
Check Digit Verification of cas no
The CAS Registry Mumber 1302-82-5 includes 7 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 4 digits, 1,3,0 and 2 respectively; the second part has 2 digits, 8 and 2 respectively.
Calculate Digit Verification of CAS Registry Number 1302-82:
(6*1)+(5*3)+(4*0)+(3*2)+(2*8)+(1*2)=45
45 % 10 = 5
So 1302-82-5 is a valid CAS Registry Number.
InChI:InChI=1/2Al.3Se/q2*+3;3*-2
1302-82-5Relevant articles and documents
Heterointerface formation of aluminum selenide with silicon: Electronic and atomic structure of Si(111):AlSe
Adams, J. A.,Bostwick, A.,Ohta, T.,Ohuchi, Fumio S.,Olmstead, Marjorie A.
, p. 1 - 8 (2008/10/09)
In this paper we present a new, stable, unreconstructed surface termination of silicon, Si(111):AlSe. The structure forms the interface layer when aluminum sesquiselenide (Al2 Se3) is deposited on Si(111) by molecular beam epitaxy. The atomic structure of the interface layer was investigated using angle-resolved valence and core-level photoelectron spectroscopy and diffraction. The Al2 Se3 Si (111) interface forms an unreconstructed bilayer structure similar to GaSe-terminated Si, with Al directly above the top Si atom and Se over the hollow site, although the temperatures for bilayer formation and for Se re-evaporation from the film are higher for AlSe than for GaSe. In addition, the valence band structure shows that the AlSe bilayer electronically passivates the bulk Si, with allinterface states lying within the bulk Si bands.
