12133-07-2 Usage
Description
Dysprosium disilicide is a chemical compound with the formula DySi2, featuring orthorhombic crystal structure. It is available in the form of 10mm and down lump, as well as 6mm pieces and smaller, with a high purity level of 99.9%.
Uses
Used in High-Temperature Applications:
Dysprosium disilicide is used as a high-temperature material for its exceptional thermal stability and resistance. Its ability to maintain structural integrity and properties at elevated temperatures makes it suitable for various high-temperature applications.
Used in Nuclear Industry:
In the nuclear industry, dysprosium disilicide is utilized as a control rod material due to its neutron-absorbing properties. Its effectiveness in controlling the rate of nuclear reactions contributes to the safe and efficient operation of nuclear reactors.
Used in Electronics:
Dysprosium disilicide is employed as a semiconductor material in the electronics industry. Its unique electronic properties, such as high electron mobility and low effective mass, make it an attractive material for various electronic devices and components.
Used in Aerospace Industry:
The aerospace industry utilizes dysprosium disilicide for its high-temperature resistance and strength-to-weight ratio. It is used in the manufacturing of components for aircraft engines, heat shields, and other high-temperature structural applications where durability and performance are crucial.
Used in Ceramics:
In the ceramics industry, dysprosium disilicide is used as a component in the production of advanced ceramic materials. Its high purity and unique chemical properties contribute to the development of ceramics with enhanced mechanical, thermal, and electrical properties.
Check Digit Verification of cas no
The CAS Registry Mumber 12133-07-2 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,1,3 and 3 respectively; the second part has 2 digits, 0 and 7 respectively.
Calculate Digit Verification of CAS Registry Number 12133-07:
(7*1)+(6*2)+(5*1)+(4*3)+(3*3)+(2*0)+(1*7)=52
52 % 10 = 2
So 12133-07-2 is a valid CAS Registry Number.
InChI:InChI=1/Dy.2H13Si/h;2*1H13/rDyH26Si2/c2-1-3/h2-3H13
12133-07-2Relevant articles and documents
Atomic structure of thin dysprosium-silicide layers on Si(1 1 1)
Engelhardt,Preinesberger,Becker,Eisele,D?hne
, p. 755 - 761 (2006)
We report on scanning tunneling microscopy results of thin dysprosium-silicide layers formed on Si(1 1 1). In the submonolayer regime, both a 23×23R30° and a 5 × 2 superstructure were found. Based on images taken at different tunneling conditions, a structure model could be developed for the 23×23R30° superstructure. For one monolayer, a 1 × 1 superstructure based on hexagonal DySi2 was observed, while several monolayers thick films are characterized by a 3×3R30° superstructure from Dy3Si5.
A two-phase magnetic structure of DySi2
Semitelou
, p. 42 - 45 (2003)
Neutron diffraction performed on the powder binary DySi2 had shown that, at room temperature, the crystal structure could be described by adopting the orthorhombic Imma system with two sites 4e and 8h for Dy and Si, respectively. At 2 K, the antiferromagnetic nature of the compound is confirmed. Two distinct magnetic phases are found with propagation vectors k1 = [0,0,0] and k2 = [1/2,2/2,0] with non-collinear magnetic moments μ1 = 3.58(4)μB and μ2 = 3.34(2)μB.
Dy-Sb-Si system at 1100 K and ternary intermetallic phases in the Dy-Sb-Si and Gd-Sb-Si systems
Morozkin
, p. L6-L8 (2008/10/08)
Physicochemical analysis techniques, including X-ray phase analysis and electron probe X-ray analysis were employed in constructing the isothermal section of the Dy-Sb-Si system at 1100 K. The ternary intermetallic phases Dy55Sb16Si28 [a=0.7746(3) nm, b=1.4853(5) nm, c=0.7761(3) nm], Dy55Sb31Si13 [a=0.7802(3) nm, 1.4972(4) nm, c=0.7817(2) nm] and Gd55Sb15Si29 [a=0.7892(5) nm, b=1.5128(7) nm, c=0.7925(5) nm] crystallize in the orthorhombic Sm5Ge4-type structure (space group Pnma; no. 62). Gd62Sb20Si18 [a=0.8759(2) nm, c=0.6363(1) nm] crystallizes in the hexagonal Mn5Si3-type structure (space group P63/mcm; no. 193).
