12067-56-0 Usage
Description
Tantalum Silicide is a chemical compound composed of tantalum and silicon, typically existing in two crystalline forms: Ta4SiC2 and Ta5Si3. It is known for its high melting point, good thermal stability, and excellent electrical conductivity. Tantalum Silicide is often used in the semiconductor industry due to its desirable properties.
Uses
Used in Semiconductor Industry:
Tantalum Silicide is used as a sputtering target material for the fabrication of integrated circuits. Its high purity (99.5% or 99.95%) and fine particle size (-325 mesh powder) make it an ideal choice for this application, ensuring consistent and reliable performance in the production of electronic devices.
Additionally, Tantalum Silicide is used in various other applications within the semiconductor industry, such as:
1. As a diffusion barrier layer in integrated circuits to prevent the intermixing of different materials and maintain the desired properties of each layer.
2. As a gate electrode material in transistors, providing excellent electrical conductivity and thermal stability.
3. In the formation of Schottky diodes, where its properties contribute to the efficient functioning of the device.
Overall, Tantalum Silicide plays a crucial role in the development and manufacturing of advanced semiconductor devices, thanks to its unique combination of properties.
Check Digit Verification of cas no
The CAS Registry Mumber 12067-56-0 includes 8 digits separated into 3 groups by hyphens. The first part of the number,starting from the left, has 5 digits, 1,2,0,6 and 7 respectively; the second part has 2 digits, 5 and 6 respectively.
Calculate Digit Verification of CAS Registry Number 12067-56:
(7*1)+(6*2)+(5*0)+(4*6)+(3*7)+(2*5)+(1*6)=80
80 % 10 = 0
So 12067-56-0 is a valid CAS Registry Number.
InChI:InChI=1/3Si.5Ta
12067-56-0Relevant articles and documents
Myers, C. E.,Searcy, A. W.
, p. 526 - 528 (1957)
New group V metal containing precursors and their use for metal containing film deposition
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Page/Page column 9, (2008/06/13)
Compound of the formula (Ia): or of the formula (Ib): These new precursors are useful for pure metal, metallic oxide, oxynitride, nitride and/or silicide film deposition to make electrodes and/or high k layers, and/or copper diffusion barrier layers, etc...
