12038-63-0Relevant articles and documents
The formation of ReS2 inorganic fullerene-like structures containing Re4 parallelogram units and metal-metal bonds
Coleman, Karl S.,Sloan, Jeremy,Hanson, Neal A.,Brown, Gareth,Clancy, Gerald P.,Terrones, Mauricio,Terrones, Humberto,Green, Malcolm L. H.
, p. 11580 - 11581 (2002)
The encapsulation of ReOx within ReS2 inorganic fullerene-like cages is described for the first time. The encapsulate was prepared by the sulfidization of both hand-milled and ball-milled samples of ReO2; partial conversio
Synthesis and Characterization of ReS2 and ReSe2 Layered Chalcogenide Single Crystals
Jariwala, Bhakti,Voiry, Damien,Jindal, Apoorv,Chalke, Bhagyashree A.,Bapat, Rudheer,Thamizhavel, Arumugam,Chhowalla, Manish,Deshmukh, Mandar,Bhattacharya, Arnab
, p. 3352 - 3359 (2016)
We report the synthesis of high-quality single crystals of ReS2 and ReSe2 transition metal dichalcogenides using a modified Bridgman method that avoids the use of a halogen transport agent. Comprehensive structural characterization using X-ray diffraction and electron microscopy confirm a distorted triclinic 1T′ structure for both crystals and reveal a lack of Bernal stacking in ReS2. Photoluminescence (PL) measurements on ReS2 show a layer-independent bandgap of 1.51 eV, with increased PL intensity from thicker flakes, confirming interlayer coupling to be negligible in this material. For ReSe2, the bandgap is weakly layer-dependent and decreases from 1.31 eV for thin layers to 1.29 eV in thick flakes. Both chalcogenides show feature-rich Raman spectra whose excitation energy dependence was studied. The lower background doping inherent to our crystal growth process results in high field-effect mobility values of 79 and 0.8 cm2/(V s) for ReS2 and ReSe2, respectively, as extracted from FET structures fabricated from exfoliated flakes. Our work shows ReX2 chalcogenides to be promising 2D materials candidates, especially for optoelectronic devices, without the requirement of having monolayer thin flakes to achieve a direct bandgap.
Construction of heterojunctions between ReS2and twin crystal ZnxCd1?xS for boosting solar hydrogen evolution
Guo, Luyan,Yu, Guiyang,Zhao, Haitao,Xing, Chuanwang,Hu, Yujia,Chen, Ting,Li, Xiyou
, p. 5137 - 5145 (2021)
Facilitating charge separation as well as surface redox reactions is considered to be an efficient way to improve semiconductor-based photocatalytic hydrogen generation. In this study, we developed a highly active and reliable photocatalyst, ReS2/T-ZCS, by anchoring nanoflower-like ReS2particles on the surface of host chalcogenide nanotwins (Zn0.5Cd0.5S). By virtue of the in-built driving force from the homojunction with a type-II staggered band alignment in twin crystal Zn0.5Cd0.5S (T-ZCS) and heterojunctions between T-ZCS and ReS2on the surface of the photocatalyst, a substantially improved charge separation and transfer property were achieved. Hence, the twin crystal Zn0.5Cd0.5S decorated nanoflower-like ReS2exhibits a significantly improved photocatalytic H2evolution rate of 112.10 mmol g?1h?1and the corresponding apparent quantum efficiency reaches 32.65% at 420 nm, which is 31 times larger than that of pure phase Zn0.5Cd0.5S. Our work not only couples the merits of homojunctions and heterojunctions to promote solar energy conversion, but also expands applications of the transition metal dichalcogenide (TMD) family in electrocatalysis, photothermal-catalysis and energy storage.
Rhenium(IV) sulfide nanotubes
Brorson, Michael,Hansen, Thomas W.,Jacobsen, Claus J. H.
, p. 11582 - 11583 (2002)
Rhenium(IV) sulfide, ReS2, has been prepared with nanotubular morphology by carbon nanotube templating. A multiwall carbon nanotube material was impregnated with solutions of NH4ReO4 or ReCl5, followed by drying and sulfidation with H2S at 1000 °C. The composite material synthesized was characterized by high-resolution transmission electron microscopy and X-ray powder diffraction. Like previously described MS2 nanotube compounds, ReS2 has a layered structure consisting of S-M-S layers. Re atoms in ordinary ReS2 are octahedrally coordinated with S, and tetranuclear metal clusters are present as a consequence of metal-metal bonds. Copyright
Absorption-edge anisotropy in ReS2 and ReSe2 layered semiconductors
Ho,Huang,Tiong,Liao
, p. 16130 - 16135 (1998)
Polarization-dependent absorption measurements of ReS2 and ReSe2 single crystals have been carried out in the temperature range between 25 and 500 K. A significant shift towards lower energies has been observed in the transmittance spectra of E∥b polarization with respect to those corresponding to E⊥ b polarization. Analysis reveals that the absorption edges of ReS2 and ReSe2 are indirect allowed transitions. The parameters that describe the temperature dependence of the absorption edges with different polarizations in the van der Waals plane are evaluated. The results indicate that the electron-phonon coupling constants for E∥b polarization are considerably larger than those of E⊥ b polarization.
Temperature dependence of energies and broadening parameters of the band-edge excitons of ReS2 and ReSe2
Ho,Liao,Huang,Tiong
, p. 15608 - 15613 (1997)
We have measured the temperature dependence of the spectral features in the vicinity of the direct gaps Egd of ReS2 and ReSe2 in the temperature range between 25 and 450 K using piezoreflectance (PzR). From a detailed line-shape fit to the PzR spectra we have been able to determine accurately the temperature dependence of the energies and broadening parameters of the band-edge excitons. The parameters that describe the temperature variation of the transition energies and broadening function have been evaluated.
Photoluminescent Re6Q8I2(Q = S, Se) Semiconducting Cluster Compounds
Laing, Craig C.,Shen, Jiahong,Chica, Daniel G.,Cuthriell, Shelby A.,Schaller, Richard D.,Wolverton, Chris,Kanatzidis, Mercouri G.
, p. 5780 - 5789 (2021/08/01)
We report three new rhenium chalcohalide cluster compounds, Re6S8I2, Re6S4Se4I2, and Re6Se8I2. The materials crystallize in the three-dimensional (3D) Re6S8Cl2 structure type with the space group P21/n. They can be synthesized with sufficiently large iodi
ReS2/ZnIn2S4 heterojunctions with enhanced visible-light-driven hydrogen evolution performance for water splitting
Xiong, Xin,Yan, Aihua,Zhang, Xiaohui,Huang, Fei,Li, Zhen,Zhang, Zhuoyu,Weng, Haifeng
, (2021/04/22)
Semiconductor photocatalysis technique for water splitting has attracted wide attention due to its potential application for solving energy crisis and environmental pollution. Among various photocatalysts, zinc indium sulfide (ZnIn2S4) exhibits excellent performance due to its suitable band edge position and excellent visible-light absorption. Herein, rhenium disulfide (ReS2)/ZnIn2S4 heterojunctions for water splitting were synthesized by a hydrothermal method. The composition of ReS2/ZnIn2S4 was fine-tuned to obtain the optimized hydrogen evolution performance without Pt cocatalysts under visible light irradiation. The results showed that ReS2/ZnIn2S4 heterostructures exhibited a superior photocatalytic hydrogen evolution rate of 1858.6 μmolh?1g?1, which was about 2.8 times higher than that of pure ZnIn2S4. The enhanced photocatalytic performance can be attributed to higher light absorption capacity, faster charge transport, lower carrier recombination rate and more efficient photogenerated electron/hole separation.