12030-05-6

Basic information

• Product Name: Indium nitride
• Synonyms: Indium nitride (InN); nitridoindium
• CAS NO: 12030-05-6
• Molecular Formula: InN
• Molecular Weight: 128.8247
• EINECS: 247-130-6
• Mol File: 12030-05-6.mol
• Article Data: 79

Chemical Properties

• CAS DataBase Reference: Indium nitride(CAS DataBase Reference)
• NIST Chemistry Reference: Indium nitride(12030-05-6)
• EPA Substance Registry System: Indium nitride(12030-05-6)

Safety Data

• Hazardous Substances Data: 12030-05-6(Hazardous Substances Data)

Upstream product

• 12030-24-9 indium(III) sulfide 
• 7440-74-6 indium 
• 57-13-6 urea 
• 7664-41-7 ammonia 
• 3385-78-2 trimethyl indium 
• 112-90-3 (Z)-9-octadecen-1-amine 
• 7727-37-9 nitrogen 
• 13510-35-5 indium(III) iodide 
• 10025-82-8 indium(III) chloride 
• 13465-09-3 indium tribromide 
• 177159-36-3 C₁₀H₂₄InN₅, low tempperatue, triclinic, P₁- 

Relevant articles and documents

Pulsed laser deposited nanostructured InN thin films as field emitters

InN thin films were deposited on c-cut Al2O3 substrates using the DC plasma assisted pulsed laser deposition technique. X-ray diffraction (XRD) studies showed the single phase, polycrystalline nature of the InN thin films with wurtzite structure. Surface morphology of the films, as seen by atomic force microscopy (AFM), consisted of densely packed nanocrystalline grains of InN. The rms value of surface roughness was found to be ～35?nm. AFM images also revealed the hexagonal features with sharp edges and protrusions of InN. The field emission characteristics of InN/Al2O3 were investigated in ultra high vacuum (1×10-8?Torr) using the diode configuration. The turn-on field, required to draw an emission current density of 10?μA/cm2, was observed to be ～3.5?V/μm. The maximum emission current density obtained was 230?μA/cm2 when the applied electric field strength was ～4?V/μm. The Fowler-Nordheim (FN) plot obtained from the current-voltage characteristic was found to be linear in accordance with the quantum mechanical tunneling phenomenon. The field enhancement factor, β, estimated from the slope of the FN plot was 21,167?cm-1. To the best of our knowledge this is the first report of field emission studies of InN/Al2O3 with such high values of β, which is comparable to that obtained for GaN or IrO2.

Organoindium azides: New precursors to indium nitride

The synthesis, properties and the molecular structure in the solid state of triazido(tripyridino)indium (1), the mixed coordination polymer {(CF3SO3)In[(CH2)3NMe2)]2(μ-N3)In[(CH

Infrared lasing in InN nanobelts

Infrared lasing from single-crystalline InN nanobelts grown by metal organic chemical vapor deposition was demonstrated. Transmission electron microscopy studies revealed that the InN nanobelts of rectangular cross section grew along [110] direction and w

Prevention of in droplets formation by HCl addition during metal organic vapor phase epitaxy of InN

The low decomposition temperature of InN and relatively high thermal stability of NH3 necessitate the use of a high NH3/TMIn ratio to prevent In droplet formation on the surface. This work shows that the addition of Cl in the form of HCl (Cl/In molar ratio range of 0.3-1.4) to the growth chamber allows the growth of high quality InN films without the formation of a second In phase at a very low value of the N/In molar inlet ratio (2500). Photoluminescence spectra in the temperature range of 144 to 4.5 K showed a broad spectral band with a cutoff energy close to the reported minimum of the InN band gap energy (0.65 eV).

High-gain photoconductivity in semiconducting InN nanowires

We report on the photoconductivity study of the individual infrared-absorbing indium nitride (InN) nanowires. Temperature-dependent dark conductivity measurement indicates the semiconducting transport behavior of these InN nanowires. An enhanced photosens

Thermal kinetic analysis of InN by TG-MS combined with PulseTA

The present work was to determine the optimal nitridation conditions of InN prepared by the nitridation of In2O3 with NH3 gas at 550-600 °C for 5-8 h. Thermogravimetry-mass spectrometry (TG-MS) coupling technique was used for a simultaneous characterization of the changes of mass and determination of the evolved gases during the thermal decomposition of InN prepared at the different nitridation temperatures. Moreover, pulse thermal analysis (PulseTA) was combined with TG-MS for the quantitative calibration of the evolved nitrogen formed during the thermal decomposition of InN samples. The decomposition of InN under argon atmosphere was found to occur in a single-stage reaction at 550-750 °C with indium and N2 as final product. It was confirmed that the optimal nitridation condition of InN should be at 600 °C for 8 h by the nitridation of In2O3 with NH3 gas. The thermal kinetic TG analysis of InN under argon atmosphere was studied at the heating rate of 5, 10, 15, 20 K min-1. The activation energy (Ea) and the pre-exponential factor (log A) were obtained by means of ASTME698, Friedman and Ozawa-Flynn-Wall (FWO) methods. The most probable conversion function f(α) was found.

Electronic properties of InN nanowires

Indium nitride nanowires (NWs) grown by a catalyst-free, vapor-solid method are shown to be high-purity, single-crystal hexagonal wurtzite and intrinsic n type with uniform diameters that range from 70 to 150 nm and lengths that vary between 3 and 30 μm. Single NWs were fabricated into field-effect transistors and the electronic material parameters of the wires were extracted and are found to be identical to comparable bulk InN.

InN nanoflowers grown by metal organic chemical vapor deposition

Hexangular indium nitride nanoflower pattern is observed from scanning electron microscopy and atomic force microscopy. The sample is grown on c-plane (0001) sapphire by metal organic chemical vapor deposition with intentional introduction of hydrogen gas. With the aid of hydrogen, a stable existence of metallic indium is achieved. This will induce the growth of InN nanoflowers via self-catalysis vapor-liquid-solid (VLS) process. It is found that the VLS process is modulated by the interface kinetics and thermodynamics among the sapphire substrate, indium, and InN, which leads to the special morphology of the authors' InN nanoflower pattern.

Photoluminescence, depth profile, and lattice instability of hexagonal InN films

The photoluminescence, structural properties, depth profile and lattice instability of hexagonal InN films were analyzed. The high quality InN films were grown on (0001) sapphire substrates by metalorganic molecular beam epitaxy. Depth profiling show a high, increasing oxygen concentration profile towards the volume of the film. The photoluminescence measurements revealed a low energy transition and a high energy feature. The results show that the spatially varying optical band gap was due to the formation of oxynitride.

Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy

The authors demonstrate the impact of growth kinetics on the surface and structural properties of N-face InN grown by molecular beam epitaxy. Superior surface morphology with step-flow growth features is achieved consistently under In-rich conditions in a low-temperature region of 500-540 °C. Remarkably, off-axis x-ray rocking curve (ω scans) widths are found to be independent of the growth conditions. The band gap determined from optical absorption measurements of optimized InN is 0.651 eV, while photoluminescence peak emission occurs at even lower energies of ～0.626 eV. Hall measurements show room temperature peak electron mobilities as high as 2370 cm2/V s at a carrier concentration in the low 1017 cm-3 region. Analysis of the thickness dependence of the carrier concentration demonstrates an-type surface accumulation layer with a sheet carrier concentration of ～3 × 10-3 cm-2.

Native defects and their effects on properties of sputtered InN films

The concept of defect chemistry is applied to investigate the native defects in the InN films prepared by radio frequency magnetron sputtering. Growth temperature and pressure ranged from 150 to 300 °C and from 0.005 to 0.07 torr, respectively, for the pu

Coulomb blockade behavior in an indium nitride nanowire with disordered surface states

We present electron transport phenomena in a single electron transistor based on an individual indium nitride nanowire. Meticulous Coulomb oscillations are observed at low temperatures. While the device shows single period Coulomb oscillation at high temp

Non-intrinsic superconductivity in InN epilayers: Role of Indium Oxide

In recent years there have been reports of anomalous electrical resistivity and the presence of superconductivity in semiconducting InN layers. By a careful correlation of the temperature dependence of resistivity and magnetic susceptibility with structural information from high-resolution x-ray diffraction measurements, we show that superconductivity is not intrinsic to InN and is seen only in samples that show traces of oxygen impurity. We hence believe that InN is not intrinsically a superconducting semiconductor.

Superconductivity of InN

The crystal structure of InN is wurtzite and its interplanar spacing of (1011) is almost the same as that of tetragonal In(101). The crystallographic similarity produces many problems to solve about the electronic properties of semiconducting InN. Above all, there is a controversy over the possibility that In layers in InN that contains poly-crystalline phase couple by tunneling and exhibit no substantial depression of their superconducting transition temperature from the bulk In value. Here we present a superconductor to insulator transition in highly disordered InN with grains having a (1011) plane parallel to sapphire (0001).

Carrier-transport studies of III-nitride/Si3N4/Si isotype heterojunctions

GaN/Si3N4/n-Si and InN/Si3N 4/n-Si heterojunctions (HJs) were fabricated using plasma-assisted molecular beam epitaxy for a comparison study. Single-crystalline wurtzite structures of GaN and InN epilayers were confirmed by high-resolution X-ray diffraction and thickness of ultrathin Si3N4 layer was measured by transmission electron microscopy. n-GaN/Si3N 4/n-Si HJs show diode-like rectifying current-voltage (I-V) characteristic, while n-InN/Si3N4/n-Si HJs show symmetric nonlinear I-V behavior. The I-V characteristics of both HJs were discussed in terms of the band diagram of HJs and the carrier transport mechanism. The activation energies of carrier conduction were estimated to be ～29 meV for GaN/Si3N4/Si and ～95 meV for InN/Si3N 4/Si HJs. Copyright

Stages of the synthesis of indium nitride with the use of urea

Results of studies on the reaction of indium with urea in the temperature range 20-750°C are presented. The intermediate products of the reaction were identified and the stages of the formation of indium nitride have been suggested. During studies on formation of gallium nitride with the use of urea we have discovered that biuret (H2NCONHCONH2) plays a substantial role in this process. [S. Podsiadlo, Thermochim. Acta, 256(1995) 367]. As shown in this work, biuret, formed in the course of the rmal condensation of urea, is the main nitriding agent in the reaction. We decided to investigate the processes of the reactions of indium with urea to form indium nitride.

Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy

The plasma-assisted molecular-beam epitaxy technique was used to study the epitaxial growth of InN on GaN. A relationship between film growth mode and the deposition condition was established by combining reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The sustained RHEED intensity oscillations were recorded for 2D growth while 2D nucleation islands were revealed by STM. Results showed less than three oscillation periods for 3 D growth, indicating the Strnski-Krastanov (SK) growth mode of the film.

Desorption of hydrogen from InN(0 0 0 over(1, ?)) observed by HREELS

The kinetics of isothermal desorption of hydrogen from InN(000 over(1, ?)) have been investigated using surface vibrational spectroscopy. Reductions in intensity of the N-H stretching and bending vibrations in high resolution electron energy loss spectra (HREELS) upon annealing indicated loss of surface hydrogen and was attributed to recombinative desorption. Hydrogen completely desorbs from the InN surface upon annealing for 900 s at 425 °C or upon annealing for 30 s at 500 °C. Surface hydrogen coverage was determined using the intensity of the N-H stretching vibrational loss peak. Fitting the coverage versus temperature for anneals of either 30 or 900 s indicated that the desorption was best described by second-order desorption kinetics with an activation energy and pre-exponential factor of 1.3 ± 0.2 eV and 10-7.3±1.0 cm2/s, respectively. In addition to thermal desorption, an increase in the carrier concentration in the film was also observed upon annealing to 450 °C or higher as shown in HREELS by a shift of the conduction band plasmon excitation to higher energy.

High pressure direct synthesis of III-V nitrides

The nitrides of group III metals: (AlN, GaN, InN) are very important materials due to their applications for short wavelength optoelectronics (light-emitting diodes and laser diodes). In this paper, the results of high-pressure direct synthesis of AlN, Ga

Indium nitride from indium iodide at low temperatures: Synthesis and their optical properties

In this paper, we present an effective synthetic protocol to produce high quality InN nanocrystals using indium iodide (InI3), one member of the family of indium halides, as the indium source at a low temperature of 3), with a stronger covalent ability, can also prevent the In3+ from being reduced to elemental indium, and then InN is formed. This synthetic protocol not only provides an alternative method to successfully synthesize high-quality InN, but is also useful to fabricate other functional materials by using stronger covalent reactants to prevent reduction/oxidation in the oxidation/reduction reaction process, respectively. Furthermore, we also report the first example of an orientation-attachment process occurring between the metal nitride particles. The high purity of the InN nanoparticles can be seen from the XPS and HRTEM results, showing the as-obtained products possess no obvious iodine or amorphous layers on the surface of particles, respectively. By controlling the parameters of reaction temperature and time, nanoparticles with different sizes were obtained as the final products. Raman and IR results indicate that our experimental data were consistent with the theoretical prediction and this gives further evidence that high quality InN nanocrystals were obtained. Moreover, it has been shown that the near-infrared band around 0.7 eV is characteristic of these samples and there were no obvious peaks around 1.9 eV, indicating that these InN nanocrystals exhibit a band gap of 0.7 eV, rather than the previously accepted 1.9 eV. The Royal Society of Chemistry and the Centre National de la Recherche Scientifique 2005.

Effects of grain size on the mosaic tilt and twist in InN films grown on GaN by metal-organic chemical vapor deposition

The structural property of InN films grown on Ga-face GaN layers by metal-organic chemical vapor deposition has been studied by high-resolution x-ray diffraction. The mosaic tilt and twist are found to be strongly dependent on the surface lateral grain size. The twist decreases with increasing grain size and finally approaches to a constant level. On the other hand, the mosaic tilt increases substantially when the grain size becomes large enough and exceeds the width of step terraces on the GaN surface, showing an important mechanism for the defect generation in the InN/GaN system with large out-of-plane lattice mismatch.

Thermal control of metathesis reactions producing GaN and InN

The addition of lithium amide (LiNH2) and ammonium chloride (NH4Cl) to metathesis (exchange) reactions between gallium triiodide (GaI3) and lithium nitride (Li3N) produces crystalline gallium nitride (GAN) in seconds at ambient pressure. A specially designed rate cell incorporating multiple thermocouples enables both the reaction velocity and temperatures to be measured. Without the additives, the GaI3/Li3N reaction propagates at > 100 cm/s with a reaction temperature above 1300 K, which exceeds the 1150 K decomposition temperature of GaN. By adding an optimal ratio of LiNH2 and NH4Cl, the reaction velocity slows to about 3 cm/s with a reaction temperature near 1200 K. Rapid heat dissipation is found to be very important in these reactions in preventing the decomposition of GaN. By using a specially designed thermal dissipation cell, the yield of GaN can be increased up to 78.8%. Applying the concepts developed in the synthesis of GaN, crystalline InN has been synthesized for the first time using solid-state metathesis reactions.

MOVPE of InN films on GaN templates grown on sapphire and silicon(111) substrates

This paper reports the study of MOVPE of InN on GaN templates grown on sapphire and silicon(111) substrates. Thermodynamic analysis of MOVPE of InN performed using NH3 as nitrogen source and the experimental findings support the droplet-free epitaxial growth of InN under high V/III ratios of input precursors. At a growth pressure of 500 Torr, the optimum growth temperature and V/III ratio of the InN film are 575-650°C and >3 × 105, respectively. The surface RMS roughness of InN film grown GaN/sapphire template is ～0.3 nm on 2 μm × 2 μm area, while the RMS roughness of the InN film grown on GaN/Si (111) templates is found as ～0.7 nm. The X-ray diffraction (XRD) measurement reveals the (0002) texture of the InN film on GaN/sapphire template with a FWHM of 281 arcsec of the InN (0002) ω rocking curve. For the film grown on GaN/Si template under identical growth conditions, the XRD measurements show the presence of metallic In, in addition to the (0002) orientation of InN layer.

Porous Si(1 1 1) and Si(1 0 0) as an intermediate buffer layer for nanocrystalline InN films

We report preliminary results on the indium nitride (InN) films grown on porous silicon (PSi) substrates by reactive magnetron sputtering using an indium target. PSi is used as an intermediate layer between silicon and InN and it provides a large area com

In -rich In1-x Gax N films by metalorganic vapor phase epitaxy

Single crystalline In1-x Gax N films containing high In content (70%-100%) were grown by metalorganic vapor phase epitaxy. A linear relation was observed between the lattice constants and gas phase GaIn ratios. The surface morphology changed from pyramid for InN to more planar ones for the InGaN alloys with increasing Ga content. The electron mobility decreased rapidly from 1200 cm2 V s for InN to less than 100 cm2 V s for In0.7 Ga0.3 N, with a carrier concentration of low- 1019 cm-3 for all the as-grown films. Using photoluminescence a single emission peak was observed at 1.4-1.6 μm for the In -rich InGaN with decreasing wavelengths up to below 20% of Ga. Two peaks were observed for the In0.80 Ga0.20 N, however, indicating possible phase separation. The x-ray photoelectron spectroscopic measurement showed shifts to higher binding energies for both In and Ga with increasing Ga content. The estimated alloy composition, however, depended sensitively on the sputtering conditions of the samples.

A molten salt-based nitridation approach for synthesizing nanostructured InN electrode materials

Single-phase InN nanocrystals were synthesized for the first time by a molten salt-based nitridation approach using InCl3and LiNH2as indium and nitrogen sources, respectively. A molten salt, KCl-LiCl, during nitridation, enabled us to obtain InN nanocrystals at relatively low temperatures ranging from 400 °C to 500 °C. SEM and HR-TEM measurements coupled with XRD data revealed that InN nanocrystals were formed with average grain sizes of approximately 50-60 nm. Notably, the photoelectrochemical cell fabricated using the InN nanocrystals synthesized at 450 °C exhibited a photocurrent response under light irradiation from 400 nm to 880 nm. The precise control of the growth of InN particles using our synthetic approach provides opportunities for developing versatile nitride nanocrystals.

Ammonothermal Crystal Growth of Indium Nitride

InN crystals with hexagonal shapes were grown from InCl3 and KNH2 in supercritical ammonia at around 280 MPa. For a successful crystal growth a molar ratio of the chloride to the amide of 1:3 was applied, thus providing an essentially ammononeutral milieu. The obtained InN crystals vary in size and aspect ratio depending on the applied furnace temperature: at 663 K hexagonal platelets up to 2 μm in diameter, as well as rods with lengths of 4 μm and diameters of 1 μm were obtained; at 773 K rods grew up to 2.5 μm in length. By combining both temperature programs, with a 10 h annealing step at both temperatures, we were able to increase the crystal size up to 5.2 μm in length and 0.4 μm in diameter.

Catalyst-free growth of InN nanorods by metal-organic chemical vapor deposition

We demonstrated the growth of catalyst-free InN nanostructures including nanorods on (0001) Al2O3 substrates using metal-organic chemical vapor deposition. As the growth time increased, growth rate along c-direction increased superlinearly with decreasing c-plane area fractions and increasing side wall areas. It was also found that desorption from the sidewalls of InN nanostructures during the InN nanorods formation was one of essential key parameters of the growth mechanism. We propose a growth model to explain the InN nanostructure evolution by considering the side wall desorption and re-deposition of indium at top c-plane surfaces. Copyright