Tungsten-silicide

Base Information

• Chemical Name: Tungsten-silicide
• CAS No.: 12039-88-2
• Molecular Formula: Si₂W
• Molecular Weight: 240.021
• Wikidata: Q414364
• Mol file: 12039-88-2.mol

Synonyms:MFCD00049704;tungsten-silicide;-325 mesh, 99.5%;Q414364

Chemical Property of Tungsten-silicide

Chemical Property:

• Appearance/Colour: Blue-gray powder or pieces, no odor.
• Melting Point: 2165 °C
• Flash Point: N/A
• PSA: 0.00000
• Density: 9.88 g/cm³
• LogP: -0.76160
• Water Solubility.: Insoluble in water.
• Hydrogen Bond Donor Count: 0
• Hydrogen Bond Acceptor Count: 0
• Rotatable Bond Count: 0
• Exact Mass: 239.904786
• Heavy Atom Count: 3
• Complexity: 72.2

Purity/Quality:

99.9% ^*data from raw suppliers

Tungsten silicide 99.5% (metals basis) ^*data from reagent suppliers

Safty Information:

• Safety Statements: 22

MSDS Files:

SDS file from LookChem

Useful:

• Canonical SMILES: [Si]#[W]#[Si]
• Uses: Oxidation-resistant coatings, electrical resistance and refractory applications. Tungsten silicide is used in microelectronics as a contact material. It is also used as a shunt over polysilicon lines to increase their conductivity and increase signal speed. Further, it acts as a barrier layer between silicon and other metals. In addition to this, it is used in microelectro mechanical systems and for oxidation-resistant coatings. It is also employed as a replacement for earlier tungsten films.

Technology Process of Tungsten-silicide

There total 21 articles about Tungsten-silicide which guide to synthetic route it. The literature collected by LookChem mainly comes from the sharing of users and the free literature resources found by Internet computing technology. We keep the original model of the professional version of literature to make it easier and faster for users to retrieve and use. At the same time, we analyze and calculate the most feasible synthesis route with the highest yield for your reference as below:

synthetic route:

Reference yield: 85.0%

silicon (7440-21-3) + tungsten (7440-33-7) → tungsten silicide (12039-88-2) + pentatungsten trisilicide

Guidance literature:

at 1350 ℃; for 4h; Inert atmosphere;

DOI:10.1002/zaac.201700329

Reference yield:

tungsten(VI) oxide + silica gel (112926-00-8,7631-86-9) + aluminium (7429-90-5) → aluminum oxide (1333-84-2,1344-28-1) + tungsten silicide (12039-88-2)

Guidance literature:

the mixture was placed in a refractory mold and burned under inert gas at 1-3500 atm; combustion temperature: 3000 K;; phase sepn. under the influence of gravitational forces;;

Reference yield:

tungsten(VI) fluoride (7783-82-6) + silicon (7440-21-3) → tungsten disilicide (12039-88-2) + tungsten (7440-33-7)

Guidance literature:

In neat (no solvent); gas-phase deposition with plasmochemical stimulation of hydrogen; annealing at 800°C;

DOI:10.1134/S002016850902006X

upstream raw materials:

silicon

tungsten

tungsten(VI) fluoride

silica gel

Refernces

• 1、 Lukovi?, Jelena,Zagorac, Dejan,Sch?n, J. Christian,Zagorac, Jelena,Jordanov, Dragana,Volkov-Husovi?, Tatjana,Matovi?, Branko. "Tungsten Disilicide (WSi2): Synthesis, Characterization, and Prediction of New Crystal Structures". . p. 2088 - 2094. Retrieved 2017.
• 2、 Shioya,Ikegami,Kobayashi,Maeda. "PROPERTIES OF CHEMICAL VAPOR DEPOSITED TUNGSTEN SILICIDE FILMS USING REACTION OF WF6 AND Si2H6.". . p. 1220 - 1224. Retrieved 1987.
• 3、 Shioya,Itoh,Kobayashi,Maeda. "CHANGES IN RESISTIVITY AND COMPOSITION OF CHEMICAL VAPOR DEPOSITED TUNGSTEN SILICIDE FILMS BY ANNEALING.". . p. 1475 - 1479. Retrieved 1986.
• 4、 Zou, Ji,Sun, Shi-Kuan,Zhang, Guo-Jun,Kan, Yan-Mei,Wang, Pei-Ling,Ohji, Tatsuki. "Chemical reactions, anisotropic grain growth and sintering mechanisms of self-reinforced ZrB2-SiC doped with WC". . p. 1575 - 1583. Retrieved 2011.
• 5、 Lee, Byung Hak,Lee, Kee Sun,Sohn, Dong Kyun,Byun, Jeong Soo,Han, Chang Hee,Park, Ji-Soo,Han, Sang Beom,Park, Jin Woon. "In situ barrier formation using rapid thermal annealing of a tungsten nitride/polycrystalline silicon structure". . p. 2538 - 2540. Retrieved 2000.
• 6、 Shon, In-Jin,Kang, Hyun-Su. "High frequency induction heated synthesis and consolidation of nanostructured TaSi2-WSi2 composite". . p. 5471 - 5474. Retrieved 2015.
• 7、 Hoenigschmid, O.. "". . . Retrieved 1907.
• 8、 Thomas,Suryanarayana,Blanquet,Vahlas,Madar,Bernard. "LPCVD WSi2 films using tungsten chlorides and silane". . p. 475 - 481. Retrieved 1993.
• 9、 Plyushcheva,Mikhailov,Shabel'nikov,Shapoval. "Tungsten thin-film deposition on a silicon wafer: The formation of silicides at W-Si interface". . p. 140 - 144. Retrieved 2009.